kw.\*:("TECHNOLOGIE GRILLE SILICIUM")
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EVALUATION DES DIFFERENTES TECHNOLOGIES MOS.LACOUR J.1974; COMMISSAR. ENERG. ATOM., BULL. INFORM. SCI. TECH.; FR.; DA. 1974; NO 194; PP. 53-61; ABS. ANGLArticle
AN N-CHANNEL SI-GATE INTEGRATED CIRCUIT TECHNOLOGY.CLEMENS JT; DOKLAN RH; NOLEN JJ et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 299-302Conference Paper
A 4096-BIT MOS MEMORY DEVICE WITH SINGLE-TRANSISTOR CELLS.HEISSING H; MITTERER R.1975; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1975; VOL. 4; NO 4; PP. 197-202; BIBL. 22 REF.Article
A HIGH VOLTAGE MOS SWITCH.SARASWAT KC; MEINDL JD; BERGER J et al.1975; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1975; VOL. 10; NO 3; PP. 136-142; BIBL. 10 REF.Article
A P-CHANNEL SI-GATE INTEGRATED CIRCUIT TECHNOLOGY.CLEMENS JT; MOWERY GL; DOKLAN RH et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 291-294Conference Paper
ION IMPLANTATION COMBINED WITH SILICON-GATE TECHNOLOGYMAI CC; HSWE M; PALMER RB et al.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 11; PP. 1219-1221; BIBL. 6 REF.Serial Issue
A LARGE-SCALE INTEGRATED MEMORY CIRCUIT USING SINGLE-TRANSISTOR CELLS WITH A DENSITY OF 1600 BIT/MM2 IN N-SILICON GATE TECHNOLOGY.WOTRUBA G.1975; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1975; VOL. 4; NO 4; PP. 207-212; BIBL. 8 REF.Article
SHIELDED SILICON GATE COMPLEMENTARY MOS INTEGRATED CIRCUITHUNG CHANG LIN; HALSOR JL; HAYES PJ et al.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 11; PP. 1199-1207; BIBL. 6 REF.Serial Issue
FABRICATION OF P-CHANNEL SILICON GATE LSI DEVICES WITH SI3N4/SIO2 GATE DIELECTRIC.TURLEY AP; MCLOUSKI RM; REID PR et al.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 1; PP. 117-120; BIBL. 7 REF.Article
HIGH-VOLTAGE SIMULTANEOUS DIFFUSION SILICON-GATE CMOS.BLANCHARD RA; GARGINI PA; MAY GA et al.1974; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1974; VOL. 9; NO 3; PP. 103-110; BIBL. 13 REF.Article
A NEW N-CHANNEL SI-GATE TECHNOLOGY FOR HIGH PACKING SENSITY, HIGH SPEED MOS LSI.KUBOTA N; SHIBATA T; OHUCHI K et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 295-298; BIBL. 5 REF.Conference Paper
N-CHANNEL SI-GATE PROCESS MNOS EEPROM TRANSISTORSJACOBS EP; SCHWABE U.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 6; PP. 517-522; BIBL. 17 REF.Article
STRESS-SENSITIVE PROPERTIES OF SILICON-GATE MOS DEVICESMIKOSHIBA H.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 3; PP. 221-232; BIBL. 13 REF.Article
SILICON-GATE CMOS DEVICES WITH 300 A GATE OXIDESLINDENBERGER WS; TRETOLA AR; POWELL WD et al.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 11; PP. 1179-1180; BIBL. 5 REF.Article
AMELIORATION DE LA COMPACITE DES MEMOIRES MOS PAR UNE TECHNOLOGIE DE GRILLE SILICIUM A DEUX NIVEAUXTONNEL EUGENE.1977; ; FRA; DA. 1977; DGRST/76 7 0653; 34 P.; 30 CM; BIBL. 5 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport
RECENT DEVELOPMENTS IN CMOS/SOS.KAISER HW; GEHWEILER WF; STOTZ WJ et al.1973; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1973; VOL. 13; NO 9; PP. 38-46 (6P.)Article
HALBLEITERSPEICHER U215D UND U225D = LES MEMOIRES SEMICONDUCTRICES U215D ET U225DKOEHLER T; MUENZER BG.1983; RADIO FERNSEHEN ELEKTRONIK; ISSN 0033-7900; DDR; DA. 1983; VOL. 32; NO 1; PP. 18-20; BIBL. 2 REF.Article
SHORT CHANNEL CRASE IN N-CHANNEL SI-GATE MNOS EEPROM TRANSISTORSJACOBS EP.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 6; PP. 479-483; BIBL. 8 REF.Article
ELECTRICAL MEASUREMENT OF FEATURE SIZES IN MOS SI2-GATE VLSI TECHNOLOGYTAKACS D; MUELLER W; SCHWABE U et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 433-438; BIBL. 8 REF.Article
EVALUATION DE LA DISPERSION DE CAPACITES INTEGREESKRUMMENACHER F.1980; COMMUNIC. GROUP. ET. TELECOMMUNIC. FOND. HASLER BERNE (A. G. E. N.); CHE; DA. 1980; NO 29; PP. 41-46; ABS. GER/ENGArticle
A UHF MOS TETRODE WITH POLYSILICON GATEKRAASSEN FM; WILTING HJ; DE GROOT WCJ et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 1; PP. 23-30; BIBL. 12 REF.Article
BORON AND PHOSPHORUS DIFFUSION THROUGH AN SIO2 LAYER FROM A DOPED POLYCRYSTALLINE SI SOURCE UNDER VARIOUS DRIVE-IN AMBIENTS.SHIMAKURA K; SUZUKI T; YADOIWA Y et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 11; PP. 991-997; H.T. 1; BIBL. 11 REF.Article
A 65 KBIT DYNAMIC RAM USING SHORT CHANNEL MOS FETSTAKADA M; TAKESHIMA T; SUZUKI S et al.1979; TRANS. INST. ELECTRON. COMMUN. ENG. JPN., E; JPN; DA. 1979; VOL. 62; NO 7; PP. 484-485; BIBL. 3 REF.Article
EFFECT OF SILICON-GATE RESISTANCE ON THE FREQUENCY RESPONSE OF MOS TRANSISTORS.HUNG CHANG LIN; ARZOUMANIAN YF; HALSOR JL et al.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 5; PP. 255-264; BIBL. 6 REF.Article
SILICON-GATE N-WELL CMOS PROCESS BY FULL ION-IMPLANTATION TECHNOLOGYOHZONE T; SHIMURA H; TSUJI K et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 9; PP. 1789-1795; BIBL. 15 REF.Article